Quantum transport in three-dimensional Weyl electron system in the presence of charged impurity scattering

Article

关键词: DISORDERED DEGENERATE SEMICONDUCTORS;    TOPOLOGICAL DIRAC SEMIMETAL;    CRITICAL-BEHAVIOR;    MOBILITY;   

DOI  :  10.1103/PhysRevB.91.035202

来源: SCIE

【 摘 要 】

We theoretically study the quantum transport in a three-dimensional Weyl electron system in the presence of the charged impurity scattering using a self-consistent Born approximation. The scattering strength is characterized by the effective fine-structure constant alpha, which depends on the dielectric constant and the Fermi velocity of the linear band. We find that the Boltzmann theory fails at the band touching point, where the conductivity takes a nearly constant value almost independent of alpha, even though the density of states linearly increases with alpha. There the magnitude of the conductivity only depends on the impurity density. The qualitative behavior is quite different from the case of the Gaussian impurities, where the minimum conductivity vanishes below a certain critical impurity strength.

【 授权许可】

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