Electronic properties of triangular and hexagonal MoS2 quantum dots

Article

关键词: BAND-STRUCTURES;    POLARIZATION;   

DOI  :  10.1103/PhysRevB.91.155410

来源: SCIE

【 摘 要 】

Using the tight-binding approach, we calculate the electronic structure of triangular and hexagonal MoS2 quantum dots. Due to the orbital asymmetry we show that it is possible to form quantum dots with the same shape but having different electronic properties. The electronic states of triangular and hexagonal quantum dots are explored, as well as the local and total density of states and the convergence towards the bulk spectrum with dot size is investigated. Our calculations show that: (1) edge states appear in the band gap, (2) that there are a larger number of electronic states in the conduction band as compared to the valence band, and (3) the relative number of edge states decreases with increasing dot size.

【 授权许可】

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