Electric dipole spin resonance in systems with a valley-dependent g factor

Article

关键词: INVERSION LAYER;    QUANTUM;    QUBIT;    SI;   

DOI  :  10.1103/PhysRevB.93.205433

来源: SCIE

【 摘 要 】

In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley-dependent g factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley-dependent g factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nat. Nanotechnol. 9, 666 (2014)].

【 授权许可】

Free