Disorder-induced transitions in resonantly driven Floquet topological insulators

Article

关键词: HALL CONDUCTANCE;    QUANTUM-WELLS;    STATES;    HAMILTONIANS;    REALIZATION;    BLOCH;    MODEL;   

DOI  :  10.1103/PhysRevB.96.054207

来源: SCIE

【 摘 要 】

We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction bands. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasienergy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet topological Anderson insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

【 授权许可】

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