Localization length versus level repulsion in one-dimensional driven disordered quantum wires

Article

关键词: SEMICONDUCTOR SUPERLATTICES;    TOPOLOGICAL INSULATOR;    DYNAMIC LOCALIZATION;    TRANSPORT;    STATISTICS;    SPECTRUM;    CONDUCTANCE;    DIFFUSION;    COHERENT;    SYSTEM;   

DOI  :  10.1103/PhysRevB.96.174202

来源: SCIE

【 摘 要 】

We study the level repulsion and its relationship with the localization length in a disordered one-dimensional quantum wire excited with monochromatic linearly polarized light and described by the Anderson-Floquet model. In the high-frequency regime, the linear scaling between the localization length divided by the length of the system and the spectral repulsion is the same as in the one-dimensional Anderson model without driving, although both quantities depend on the parameters of the external field. In the low-frequency regime the level repulsion depends mainly on the value of the amplitude of the field, and the proportionality between level repulsion and localization length is lost.

【 授权许可】

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