Strain engineering of the silicon-vacancy center in diamond

Article

关键词: MECHANICAL RESONATOR;    COHERENT CONTROL;    SPIN QUBIT;    SINGLE;    NANOSTRUCTURES;    OSCILLATOR;    CRYSTALS;    PHONONS;    STATE;    IONS;   

DOI  :  10.1103/PhysRevB.97.205444

来源: SCIE

【 摘 要 】

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

【 授权许可】

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