Local electronic structure of interstitial hydrogen in iron disulfide

Article

关键词: PYRITE FES2 NANOCRYSTALS;    MUONIUM;    DEPOLARIZATION;    SEMICONDUCTORS;    TRANSPORT;    CRYSTALS;   

DOI  :  10.1103/PhysRevB.98.075210

来源: SCIE

【 摘 要 】

The electronic structure of interstitial hydrogen in a compound semiconductor FeS2 (naturally n type) is inferred from a muon study. An implanted muon (Mu, a pseudohydrogen) forms electronically different defect centers discerned by the hyperfine parameter omega(hf). A body of evidence indicates that one muon is situated at the center of an iron-cornered tetrahedron with nearly isotropic omega(hf) (Mu(p)) and that the other exists as a diamagnetic state (Mu(d), omega(hf similar or equal to) 0). Their response to thermal agitation indicates that the Mu(d) center accompanies a shallow level (donor or acceptor) understood by the effective mass model, while the electronic structure of the Mu(p) center is more isolated from the host than Mu(d), forming a deeper donor level. These observations suggest that interstitial hydrogen also serves as an electronically active impurity in FeS2. Based on earlier reports on the hydrogen diffusion in FeS2, the possibility of fast diffusion for Mu(p) leading to the formation of a complex defect state (Mu(d)*, T <= 100 K) or to a motional narrowing state (Mu(p)*, T >= 150 K) is also discussed.

【 授权许可】

Free