Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon

Article

关键词: LATTICE-RELAXATION;    QUANTUM BEATS;    PRECESSION;    GERMANIUM;    STATES;   

DOI  :  10.1103/PhysRevB.99.035202

来源: SCIE

【 摘 要 】

We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventually providing crucial insights also into nonradiative recombination mechanisms.

【 授权许可】

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