Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl

Article

关键词: T-MATRIX APPROXIMATIONS;    MUFFIN-TIN ALLOYS;    SPINTRONICS;   

DOI  :  10.1103/PhysRevB.99.224207

来源: SCIE

【 摘 要 】

The spin-filter material CrVTiAl is a promising candidate for producing highly spin-polarized currents at room temperature in a nonmagnetic architecture. Thin films of compensated-ferrimagnetic CrVTiAl have been grown, and their electrical and magnetic properties have been studied. The resistivity shows two-channel semiconducting behavior with one disordered gapless channel and a gapped channel with activation energy Delta E = 0.1-0.2 eV. Magnetoresistance measurements to B = 35 T provide values for the mobilities of the gapless channel, leading to an order of magnitude difference in the carrier effective masses, which are in reasonable accord with our density-functional-theory-based results. The density of states and electronic band structure are computed for permutations of the four sublattices arranged differently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti), spin-gapless (Cr-V-Ti-Al), and spin-filtering (Cr-Ti-V-Al) phases. Robustness of the spin-gapless phase to substitutional disorder is also considered.

【 授权许可】

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