Resonant tunneling anisotropic magnetoresistance induced by magnetic proximity

Article

关键词: ROOM-TEMPERATURE;    ELECTRICAL DETECTION;    SPIN POLARIZATION;    TRANSISTOR;   

DOI  :  10.1103/PhysRevB.102.045312

来源: SCIE

【 摘 要 】

We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related tunneling anisotropic magnetoresistance (TAMR) has been extensively studied before, we predict an effect with a different origin arising from the evolution of a resonant condition with the in-plane rotation of magnetization and having a much larger magnitude. The resonances in the tunneling emerge from a spin-parity-time symmetry of the scattering states. However, such a symmetry is generally absent from the system itself and only appears for certain parameter values. Without resonant behavior in the topological surface states of a proximitized three-dimensional topological insulator (TI), TAMR measurements can readily distinguish them from often misinterpreted trivial Rashba-like states inherent to many TIs.

【 授权许可】

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