Impact of nitrogen doping on the linear and nonlinear terahertz response of graphene | |
Article | |
关键词: CHEMICAL-VAPOR-DEPOSITION; DOPED GRAPHENE; OPTICAL-PROPERTIES; TRANSPORT-PROPERTIES; CHARGE; CONDUCTIVITY; CARBON; PURE; | |
DOI : 10.1103/PhysRevB.104.155402 | |
来源: SCIE |
【 摘 要 】
It is well known that impurities play a central role in the linear and nonlinear response of graphene at optical and terahertz frequencies. In this work, we calculate the bands and intraband dipole connection elements for nitrogen-doped monolayer graphene using a density functional tight-binding approach. Employing these results, we calculate the linear and nonlinear response of the doped graphene to terahertz pulses using a density-matrix approach in the length gauge. We present the results for the linear and nonlinear mobility as well as third-harmonic generation in graphene for adsorbed and substitutional nitrogen doping for a variety of doping densities. We show that the conduction bands are more parabolic in graphene structures with substitutional nitrogen doping than for those with adsorbed nitrogen. As a result, substitutional doping has a greater impact on the terahertz mobility and nonlinear response of graphene than adsorbed nitrogen does.
【 授权许可】
Free