Magnetic ion relaxation time distribution within a quantum well

Article

关键词: SPIN-LATTICE-RELAXATION;    SEMICONDUCTOR HETEROSTRUCTURES;    INTERFACE CHARACTERIZATION;    PARAMAGNETIC-RESONANCE;    CHARGED EXCITONS;    GROWTH;    MN2+;    GAS;   

DOI  :  10.1103/PhysRevB.106.165309

来源: SCIE

【 摘 要 】

Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin-relaxation time. Here we utilize selective Mn doping to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single (Cd,Mg)Te/(Cd,Mn)Te quantum wells with manganese ions located at different positions along the growth axis-in the center or on the sides of the quantum well. We observe that spin-lattice relaxation of Mn2+ significantly depends on the ion-carrier wave-function overlap at low-magnetic fields. Interestingly, the effect is clearly observed despite very low carrier density, which suggests the potential for control of the Mn2+ ion relaxation rate by means of the electric field in future experiments.

【 授权许可】

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