CHAOS IN RESONANT-TUNNELING SUPERLATTICES

Note

关键词: DRIVEN GUNN-DIODES;    EXTRINSIC SEMICONDUCTORS;    FINITE SAMPLES;    INSTABILITY;    DYNAMICS;    DOMAINS;    STATES;    GAAS;   

DOI  :  10.1103/PhysRevB.52.7849

来源: SCIE

【 摘 要 】

Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under de voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.

【 授权许可】

Free