Metal-insulator transition in Si : X (X=P,B): Anomalous response to a magnetic field

Article

关键词: CROSSOVER SCALING FUNCTIONS;    ANDERSON-MOTT TRANSITION;    CONDUCTIVITY EXPONENT;    EXCHANGE ANISOTROPY;    DISORDERED-SYSTEMS;    ELECTRONIC SYSTEMS;    MOBILITY EDGE;    MAGNETORESISTANCE;    SEMICONDUCTORS;   

DOI  :  10.1103/PhysRevB.58.6692

来源: SCIE

【 摘 要 】

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field H and dopant concentration n lying on a single universal curve: sigma(n,H)/sigma(n,0)= G[H(-delta)Delta n] with a magnetic-field crossover exponent delta approximate to 2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, Delta n(c)proportional to H-delta is a common feature of uncompensated doped semiconductors.

【 授权许可】

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