期刊论文详细信息
Metal-insulator transition in Si : X (X=P,B): Anomalous response to a magnetic field | |
Article | |
关键词: CROSSOVER SCALING FUNCTIONS; ANDERSON-MOTT TRANSITION; CONDUCTIVITY EXPONENT; EXCHANGE ANISOTROPY; DISORDERED-SYSTEMS; ELECTRONIC SYSTEMS; MOBILITY EDGE; MAGNETORESISTANCE; SEMICONDUCTORS; | |
DOI : 10.1103/PhysRevB.58.6692 | |
来源: SCIE |
【 摘 要 】
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field H and dopant concentration n lying on a single universal curve: sigma(n,H)/sigma(n,0)= G[H(-delta)Delta n] with a magnetic-field crossover exponent delta approximate to 2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, Delta n(c)proportional to H-delta is a common feature of uncompensated doped semiconductors.
【 授权许可】
Free