Electric-field effect in ultrathin films near the superconductor-insulator transition

Article

关键词: COULOMB GAP;    SLOW RELAXATION;    METAL-FILMS;    GLASS;    TRANSPORT;    SEMICONDUCTOR;    DISORDER;    PHASE;    SI;   

DOI  :  10.1103/PhysRevB.65.012501

来源: SCIE

【 摘 要 】

The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of the applied electric field was found in regimes in which there was no sign of glassy behavior. For films with thicknesses that put them on the insulating side of the superconductor-insulator transition, the conductance increased with electric field, whereas for films that Acre becoming superconducting it decreased. Application of magnetic fields to the latter, which reduce the transition temperature and ultimately quench superconductivity, changed the sign of the reponse of the conductance to electric field back to that found for insulators. We propose that this symmetric response to capacitive charging is a consequence of changes in the conductance of the a-Ge layer, and is not a fundamental property of the physics of die superconductor-insulator transition as previously suggested.

【 授权许可】

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