Spin-polarized Zener tunneling in (Ga,Mn)As

Article

关键词: QUANTUM-WELLS;    TRANSPORT;    HETEROSTRUCTURE;    FERROMAGNETISM;    SEMICONDUCTORS;    INJECTION;    GAAS;   

DOI  :  10.1103/PhysRevB.65.041306

来源: SCIE

【 摘 要 】

We investigate spin-polarized inter-band tunneling through measurement of a (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.

【 授权许可】

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