ac transport through a resonant level between ferromagnetic electrodes

Article

关键词: MAGNETIC TUNNEL-JUNCTIONS;    LARGE MAGNETORESISTANCE;    CURRENT PARTITION;    SYSTEMS;    CONDUCTORS;    SCATTERING;    BARRIER;    FILMS;    MODEL;   

DOI  :  10.1103/PhysRevB.70.205316

来源: SCIE

【 摘 要 】

We report the investigation of the spin-valve effect through a resonant level between a ferromagnetic electrode in the presence of an external ac bias. We use the current conserving and gauge invariant theory developed by Buttiker to calculate the dynamic conductance. Specifically, we have calculated the tunneling magnetoresistance (TMR) ratio as a function of various system parameters such as the angle between magnetization of the left and right leads, ac frequency, and the Fermi energy. We found that the TMR ratio can be modulated by ac frequency. At large frequency, the TMR ratio can be negative.

【 授权许可】

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