Gap opening in the zeroth Landau level of graphene

Article

关键词: MAGNETIC-FIELDS;    HALL;    FERROMAGNETISM;    CONDUCTIVITY;    ELECTRONS;    SHEETS;    METALS;   

DOI  :  10.1103/PhysRevB.80.201403

来源: SCIE

【 摘 要 】

We have measured a strong increase of the low-temperature resistivity rho(xx) and a zero-value plateau in the Hall conductivity sigma(xy) at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in rho(xx) and the anomalous nu = 0 plateau in sigma(xy) in terms of coexisting electrons and holes in the same split zero-energy Landau level.

【 授权许可】

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