Direct observations of the vacancy and its annealing in germanium

Article

关键词: N-TYPE GERMANIUM;    SELF-DIFFUSION;    GE;    DEFECTS;    SI;    SPECTROSCOPY;    TEMPERATURE;    IRRADIATION;    SILICON;    DAMAGE;   

DOI  :  10.1103/PhysRevB.83.235212

来源: SCIE

【 摘 要 】

Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3 x 10(14) cm(-2) at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272 +/- 4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100 K. This is identified as the positron lifetime in a germanium monovacancy. Annealing experiments in the temperature interval 35-300 K reveal two annealing stages. The first at 100 K is tentatively associated with the annealing of the Frenkel pair, the second at 200 K with the annealing of the monovacancy. Above 200 K it is observed that mobile neutral monovacancies form divacancies, with a positron lifetime of 315 ps.

【 授权许可】

Free