Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

Article

关键词: SINGLE DIRAC CONE;    SURFACE-STATE;    BI2TE3;   

DOI  :  10.1103/PhysRevB.84.075316

来源: SCIE

【 摘 要 】

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition, where a high level of compensation is achieved, the resistivity exceeds 0.5 Omega cm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.

【 授权许可】

Free