X-ray-induced persistent photoconductivity in vanadium dioxide

Article

关键词: METAL-INSULATOR-TRANSITION;    CARRIER RELAXATION;    ELECTRIC-FIELD;    II-VI;    VO2;    DENSITY;    MODEL;    TEMPERATURE;    DEPENDENCE;    TRANSPORT;   

DOI  :  10.1103/PhysRevB.90.165109

来源: SCIE

【 摘 要 】

The resistivity of vanadium dioxide (VO2) decreased by over one order of magnitude upon localized illumination with x rays at room temperature. Despite this reduction, the structure remained in the monoclinic phase and had no signature of the high-temperature tetragonal phase that is usually associated with the lower resistance. Once illumination ceased, relaxation to the insulating state took tens of hours near room temperature. However, a full recovery of the insulating state was achieved within minutes by thermal cycling. We show that this behavior is consistent with random local-potential fluctuations and random distribution of discrete recombination sites used to model residual photoconductivity.

【 授权许可】

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