Spin injection from a ferromagnet into a semiconductor in the case of a rough interface

Article

关键词: METAL;    TRANSPORT;    MAGNETORESISTANCE;    SPINTRONICS;    CHARGE;   

DOI  :  10.1103/PhysRevB.91.045202

来源: SCIE

【 摘 要 】

The effect of the interface roughness on the spin injection from a ferromagnet into a semiconductor is studied theoretically. Even a small interface irregularity can lead to a significant enhancement of the injection efficiency. When a typical size of the irregularity, a, iswithin a domain lambda(F) << a lambda lambda(N), where lambda(F) and lambda(N) are the spin-diffusion lengths in the ferromagnet and semiconductor, respectively, the geometrical enhancement factor is similar to lambda(N)/a. The origin of the enhancement is the modification of the local electric field on small scales similar to a near the interface. We demonstrate the effect of enhancement by considering a number of analytically solvable examples of injection through curved ferromagnet-semiconductor interfaces. For a generic curved interface, the enhancement factor is similar to lambda(N)/R, where R is the local radius of curvature.

【 授权许可】

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