Mobility anisotropy of two-dimensional semiconductors

Article

关键词: FIELD-EFFECT TRANSISTORS;    LAYER BLACK PHOSPHORUS;    PHONON-LIMITED MOBILITY;    CARRIER MOBILITY;    THEORETICAL PREDICTION;    ELECTRICAL-PROPERTIES;    INVERSION LAYER;    GRAPHENE;    ORIENTATION;    NANORIBBONS;   

DOI  :  10.1103/PhysRevB.94.235306

来源: SCIE

【 摘 要 】

The carrier mobility of anisotropic two-dimensional semiconductors under longitudinal acoustic phonon scattering was theoretically studied using deformation potential theory. Based on the Boltzmann equation with the relaxation time approximation, an analytic formula of intrinsic anisotropic mobility was derived, showing that the influence of effective mass on mobility anisotropy is larger than those of deformation potential constant or elastic modulus. Parameters were collected for various anisotropic two-dimensional materials (black phosphorus, Hittorf's phosphorus, BC2N, MXene, TiS3, and GeCH3) to calculate their mobility anisotropy. It was revealed that the anisotropic ratio is overestimated by the previously described method.

【 授权许可】

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