Exciton confinement in strain-engineered metamorphic InAs/InxGa1-xAs quantum dots

Article

关键词: 1.5 MU-M;    LIGHT-EMISSION;    EPITAXIAL-GROWTH;    LASERS;    GAAS;    NANOSTRUCTURES;    NM;    SEMICONDUCTORS;    DEVICES;    PHYSICS;   

DOI  :  10.1103/PhysRevB.96.195301

来源: SCIE

【 摘 要 】

We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic InxGa1-x As confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from 4.8% to 5.7% the reduced mass of the exciton increases, but saturates at highermismatches. At lowQD-CL mismatch there is clear evidence of spillover of the exciton wave function due to small localization energies. This is suppressed as the In content x in the CLs decreases (mismatch and localization energy increasing). The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In content in the barrier is low (mismatch is high and localization energy is large). Finally, an anomalously small measured Bohr radius in samples with the highest x is attributed to a combination of thermalization due to low localization energy, and its enhancement with magnetic field, a mechanism which results in small dots in the ensemble dominating the measured Bohr radius.

【 授权许可】

Free