Superconductor-insulator transition in fcc GeSb2Te4 at elevated pressures

Article

关键词: PHASE-CHANGE MATERIALS;    CHANGE MEMORY;    ELECTRONIC SYSTEMS;    FILMS;    AMORPHIZATION;    LOCALIZATION;    INDIUM;   

DOI  :  10.1103/PhysRevB.97.024513

来源: SCIE

【 摘 要 】

We show that polycrystalline GeSb2Te4 in the fcc phase (f-GST), which is an insulator at low temperature at ambient pressure, becomes a superconductor at elevated pressures. Our study of the superconductor-insulator transition versus pressure at low temperatures reveals a second-order quantum phase transition with linear dependence of the transition temperature on the pressure above the critical zero-temperature pressure. In addition, we demonstrate that at higher pressures the f-GST goes through a structural phase transition via amorphization to bcc GST (b-GST), which also becomes superconducting. We also find that in the pressure regime where an inhomogeneous mixture of amorphous and b-GST exists, there is an anomalous peak in magnetoresistance, and we suggest an explanation for this anomaly.

【 授权许可】

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