Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

Article

关键词: QUANTUM;    STORAGE;    SI-28;    ATOM;   

DOI  :  10.1103/PhysRevB.97.195301

来源: SCIE

【 摘 要 】

Two-electron states bound to donors in silicon are important for both two-qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multielectron exchange and correlation effects taking into account the full band structure of silicon and the atomic-scale granularity of a nanoscale device. Excited s-like states of A(1) symmetry are found to strongly influence the charging energy of a negative donor center. We apply the technique on subsurface dopants subjected to gate electric fields and show that bound triplet states appear in the spectrum as a result of decreased charging energy. The exchange energy, obtained for the two-electron states in various confinement regimes, may enable engineering electrical control of spins in donor-dot hybrid qubits.

【 授权许可】

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