Charge localization in disordered colossal-magnetoresistance manganites

Article

关键词: OFF-DIAGONAL DISORDER;    TRANSPORT-PROPERTIES;    POLARON FORMATION;    SYSTEMS;    LA1-XSRXMNO3;    TRANSITION;    STATES;    FILMS;    RESISTIVITY;    MODEL;   

DOI  :  10.1103/PhysRevB.56.4541

来源: SCIE

【 摘 要 】

The metallic or insulating nature of the paramagnetic phase of the colossal-magnetoresistance manganites is investigated via a double-exchange Hamiltonian with diagonal disorder. The mobility edge trajectory is determined with the transfer-matrix method. Density-of-states calculations indicate that random hopping alone is not sufficient to induce Anderson localization at the Fermi level with 20-30% doping. We argue that the metal-insulator transition is likely due to the formation of localized polarons from nonuniform extended states as the effective bandwidth is reduced by random hoppings and electron-electron interactions.

【 授权许可】

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