Line junctions in the quantum Hall effect

Article

关键词: EDGE;    STATES;    LOCALIZATION;    EXCITATIONS;    TRANSPORT;    DIMENSION;   

DOI  :  10.1103/PhysRevB.56.15231

来源: SCIE

【 摘 要 】

A long narrow gate across a fractional quantum Hall fluid at filling nu=1/m with odd integer m, creates a one-dimensional (1D) system that is isomorphic to a disordered 1D electron gas with attractive interactions. By varying the gate potential along such a line junction, it should be possible to tune through the ID localization transition, predicted for an attractively interacting electron gas. The key signature of this 1D metal-insulator transition is the temperature dependence of the conductivity, which diverges as a power of temperature in the metallic phase, and vanishes rapidly in the insulator. We show that the 1D conductivity can be extracted from a standard Hall transport measurement, in the regime where the Hall conductance is close to its quantized value. A line junction in a nu=2/3 quantized Hall fluid is predicted to exhibit a similar localization transition.

【 授权许可】

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