Time-resolved luminescence of InP quantum dots in a Ga0.5In0.5P matrix: Carrier injection from the matrix

Article

关键词: VAPOR-PHASE EPITAXY;    GAAS;    PHOTOLUMINESCENCE;    ISLANDS;    WELLS;    INGAAS;    GROWTH;    LASER;   

DOI  :  10.1103/PhysRevB.57.1386

来源: SCIE

【 摘 要 】

We conducted time-resolved luminescence spectroscopy on self-assembled InP dots in a Ga0.5In0.5P matrix at different photon excitation energies. In comparison with results on Ga0.5In0.5P without dots, the influence of the Ga0.5In0.5P matrix on luminescence-decay profiles of InP dots was clarified, By excitation at the Ga0.5In0.5P matrix, the long-decay component (similar to 50 ns), as well as the 400 ps radiative-decay component, was observed in luminescence of InP dots. This long-decay component reflects carrier lifetime in the Ga0.5In0.5P matrix, Carrier injection time from the Ga0.5In0.5P matrix to InP dots is estimated to be similar to 100 ps, and is determined by carrier diffusion in the matrix.

【 授权许可】

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