Properties of the apparent metal-insulator transition in two-dimensional systems

Article

关键词: 2 DIMENSIONS;    2-DIMENSIONAL SYSTEM;    SCALING THEORY;    B=0;    CONDUCTIVITY;    FIELD;    GAAS;    GAS;   

DOI  :  10.1103/PhysRevB.58.R7520

来源: SCIE

【 摘 要 】

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p(0)(c). We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density. [S0163-1829(98)50536-X].

【 授权许可】

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