Reaction-diffusion model for thermal growth of silicon nitride films on Si

Article

关键词: 2P CORE-LEVEL;    NH3 ADSORPTION;    CONTRASTED BEHAVIOR;    SI(111) SURFACES;    ATOMIC TRANSPORT;    SI(100)2 X-1;    THIN-FILMS;    N 1S;    AMMONIA;    DYNAMICS;   

DOI  :  10.1103/PhysRevB.62.R16255

来源: SCIE

【 摘 要 】

Thermal growth of ultrathin silicon nitride films on Si in NH3 is modeled as a dynamic system governed by reaction-diffusion equations. Solution of the model yields profiles of the involved species consistent with experimental observations of a stoichiometric silicon nitride layer in the near-surface region and a subnitride layer of comparable thickness in the near-interface region. Self-limited growth kinetics are also obtained from the model equations in good agreement with experimental results, owing to a diffusion barrier layer to the nitridant species formed in the near-surface region by stoichiometric silicon nitride.

【 授权许可】

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