Global versus local ferromagnetism in a model for diluted magnetic semiconductors studied with Monte Carlo techniques

Article

关键词: III-V SEMICONDUCTORS;   

DOI  :  10.1103/PhysRevB.65.241202

来源: SCIE

【 摘 要 】

A model recently introduced for diluted magnetic semiconductors by Berciu and Bhatt [Phys. Rev. Lett. 87, 107203 (2001)] is studied with a Monte Carlo technique, and the results are compared with Hartree-Fock calculations. For doping rates close to the experimentally observed metal-insulator transition, a picture dominated by ferromagnetic droplets formed below a T* scale emerges. The moments of these droplets align as the temperature is lowered below a critical value T-C

【 授权许可】

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