Global versus local ferromagnetism in a model for diluted magnetic semiconductors studied with Monte Carlo techniques | |
Article | |
关键词: III-V SEMICONDUCTORS; | |
DOI : 10.1103/PhysRevB.65.241202 | |
来源: SCIE |
【 摘 要 】
A model recently introduced for diluted magnetic semiconductors by Berciu and Bhatt [Phys. Rev. Lett. 87, 107203 (2001)] is studied with a Monte Carlo technique, and the results are compared with Hartree-Fock calculations. For doping rates close to the experimentally observed metal-insulator transition, a picture dominated by ferromagnetic droplets formed below a T* scale emerges. The moments of these droplets align as the temperature is lowered below a critical value T-C
Free 【 授权许可】