Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111)

Article

关键词: BY-LAYER GROWTH;    HOMOEPITAXIAL GROWTH;    STACKING-FAULT;    METAL-SURFACES;    TWIN FORMATION;    CU(111);    SUPPRESSION;    IMAGES;    FILMS;   

DOI  :  10.1103/PhysRevB.68.201401

来源: SCIE

【 摘 要 】

Analysis of homoepitaxial growth on Ir(111) by scanning tunneling microscopy (STM) reveals that two different phases nucleate. We find islands in the regular face-centered cubic (fcc) stacking as well as in the hexagonal close-packed (hcp) stacking. Performing STM measurements on fcc and hcp areas shows an apparent, voltage dependent height difference of up to 6% of the regular layer distance. By applying first-principles calculations, the voltage dependent height difference can be attributed to the difference in the electronic structures of the two phases. The atoms in hcp stacking appear lower for a wide range of tunneling voltages, opposite to the actual relaxation.

【 授权许可】

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