Resonant escape over an oscillating barrier in a single-electron ratchet transfer

Article

关键词: STOCHASTIC RESONANCE;    ACTIVATION;    AMPLIFICATION;    DRIVEN;   

DOI  :  10.1103/PhysRevB.82.033303

来源: SCIE

【 摘 要 】

Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a time-scale characteristic of the single-electron escape, synchronization occurs between the deterministic barrier modulation and the stochastic escape events. The average escape time as a function of its oscillation frequency exhibits a minimum providing a primary signature for resonant activation of single electrons.

【 授权许可】

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