Effect of gadolinium doping on the electronic band structure of europium oxide

Article

关键词: ANGLE-RESOLVED PHOTOEMISSION;    TOTAL-ENERGY CALCULATIONS;    AUGMENTED-WAVE METHOD;    THIN-FILMS;    MOLECULAR ICOSAHEDRA;    EUO FILMS;    BASIS-SET;    CAMD;    CHALCOGENIDES;    BEAMLINE;   

DOI  :  10.1103/PhysRevB.85.014406

来源: SCIE

【 摘 要 】

High quality films of EuO and Eu(0.96)Gd(0.04)O were grown on p-type Si(100) via pulsed laser deposition. X-ray-diffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements show an apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.

【 授权许可】

Free