Near-threshold properties of the electronic density of layered quantum dots

Article

关键词: INTERSUBBAND TRANSITIONS;    WELLS;   

DOI  :  10.1103/PhysRevB.85.165322

来源: SCIE

【 摘 要 】

We present away tomanipulate an electron trapped in a layered quantum dot based on near-threshold properties of one-body potentials. First, we show that potentials with a simple global parameter allow the manipulation of the wave function, changing its spatial localization. This phenomenon seems to be fairly general and could be implemented using current quantum-dot quantum-well technologies and materials if a proper layered quantum dot is designed. So, we propose a model layered quantum dot that consists of a spherical core surrounded by successive layers of different materials. The number of layers and the constituent materials are chosen to highlight the near-threshold properties. The manipulation of the spatial localization of the electron in a layered quantum dot yields results consistent with actual experimental parameters.

【 授权许可】

Free