Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

Article

关键词: TOPOLOGICAL INSULATORS;    TRANSPORT;    MATRIX;   

DOI  :  10.1103/PhysRevB.89.195104

来源: SCIE

【 摘 要 】

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e(2)/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv: 1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length xi is comparable with the sample width L-y but much smaller than the sample length L-x

【 授权许可】

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