Electrical transport properties of single-crystal CaB6, SrB6, and BaB6

Article

关键词: HEAVILY-DOPED SEMICONDUCTORS;    LOW-TEMPERATURE;    HIGH-PRESSURE;    ELECTRONIC TRANSPORT;    DIVALENT HEXABORIDES;    MAGNETIC-PROPERTIES;    DX CENTERS;    FERROMAGNETISM;    MAGNETORESISTANCE;    SCATTERING;   

DOI  :  10.1103/PhysRevB.94.125141

来源: SCIE

【 摘 要 】

The electrical resistivity and Hall effect of alkaline-earth-metal hexaboride single crystals are measured as a function of temperature, hydrostatic pressure, and magnetic field. The transport properties vary weakly with the external parameters and are modeled in terms of intrinsic variable-valence defects. These defects can stay either in (1) delocalized shallow levels or in (2) localized levels resonant with the conduction band, which can be neutral or negatively charged. Satisfactory agreement is obtained for electronic transport properties in a broad temperature and pressure range, although fitting the magnetoresistance is less straightforward and a combination of various mechanisms is needed to explain the field and temperature dependences.

【 授权许可】

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