Electronic transport in thin films of BaPbO3: Unraveling two-dimensional quantum effects

Article

关键词: WEAK-LOCALIZATION;    MAGNETORESISTANCE;    FLUCTUATION;    CONDUCTIVITY;    DECOHERENCE;    RESISTANCE;    INTERFACE;    INSULATOR;    SURFACES;    METAL;   

DOI  :  10.1103/PhysRevB.100.165402

来源: SCIE

【 摘 要 】

Recently, perovskite-related BaPbO3 has attracted attention due to its hidden topological properties and, moreover, has been used as a thin layer in heterostructures to induce two-dimensional superconductivity. Here we investigate the normal-state electronic transport properties of thin films of BaPbO3. Temperature- and magneticfield-dependent sheet resistances are strongly affected by two-dimensional quantum effects. Our analysis decodes the interplay of spin-orbit coupling, disorder, and electron-electron interaction in this compound. Like for recently discussed topological materials, we find that weak antilocalization is the dominant protagonist in magnetotransport, whereas electron-electron interactions play a pronounced role in the temperature dependence. A systematic understanding of these quantum effects is essential to allow for accurate control of properties not only of thin films of BaPbO3 but also of topological heterostructures.

【 授权许可】

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