HIGH-FIELD MAGNETORESISTANCE IN GAAS/GA0.7AL0.3AS HETEROJUNCTIONS ARISING FROM ELASTIC AND INELASTIC-SCATTERING

Article

关键词: DIMENSIONAL ELECTRON-GAS;    FORCE-BALANCE THEORY;    ALXGA1-XAS/GAAS HETEROJUNCTIONS;    MAGNETOPHONON-RESONANCE;    TRANSPORT;    MOBILITY;    CONDUCTIVITY;    RESISTIVITY;    QUANTUM;    HETEROSTRUCTURES;   

DOI  :  10.1103/PhysRevB.48.5457

来源: SCIE

【 摘 要 】

In this paper we present measurements and calculations that explain the high-field magnetoresistance observed up to 30 T in GaAs-GaxAl1-xAs heterojunctions over the temperature range 1.5-300 K. The scattering mechanisms that determine the mobility analogue 1/n(e)erho(xx) are compared at B = 0 and in high field, where it is found that the field and temperature dependence of the Landau-level broadening significantly influences the scattering. The calculations, based on the momentum balance equation, include all the scattering processes self-consistently in evaluation of both the density of states and resistivity. By this method we are able to obtain good agreement between experiment and theory, both at B = 0 and in high magnetic field.

【 授权许可】

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