期刊论文详细信息
Resistivity due to low-symmetrical defects in metals
Article
关键词: RESIDUAL RESISTIVITY;    TRANSITION-METALS;    LLOYD FORMULA;    CU ALLOYS;    IMPURITIES;    DENSITY;    STATES;   
DOI  :  10.1103/PhysRevB.57.12719
来源: SCIE
【 摘 要 】

The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects is calculated for the fee host metals Al and Ag and the bcc transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process. The results for single impurities compare well to calculations by other authors and to experimental values.

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