期刊论文详细信息
Resistivity due to low-symmetrical defects in metals | |
Article | |
关键词: RESIDUAL RESISTIVITY; TRANSITION-METALS; LLOYD FORMULA; CU ALLOYS; IMPURITIES; DENSITY; STATES; | |
DOI : 10.1103/PhysRevB.57.12719 | |
来源: SCIE |
【 摘 要 】
The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects is calculated for the fee host metals Al and Ag and the bcc transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process. The results for single impurities compare well to calculations by other authors and to experimental values.
【 授权许可】
Free