Bulk quantum Hall effect in eta-Mo4O11

Article

关键词: TRANSPORT-PROPERTIES;    ORGANIC CONDUCTORS;    MAGNETIC-FIELDS;    SURFACE-STATES;    SUPERCONDUCTORS;    CRYSTALS;    PHASE;   

DOI  :  10.1103/PhysRevB.58.10778

来源: SCIE

【 摘 要 】

We report the observation of a bulk quantum Hall effect in the quasi-two-dimensional conductor eta-Mo4O11. The Hall resistance exhibits well-defined quantized plateaus, coincident with pronounced minima in the diagonal resistance. We propose a model involving (i) tiny quasi-two-dimensional electron and hole pockets, left over from an imperfectly nested charge-density wave, and (ii) the exchange of carriers between these mobile states and the localized charge-density-wave condensate. Together with a magnetic field, these factors result in well-separated bands of mobile states superimposed on a background continuum of localized states-the key ingredients for a quantum Hall effect. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems. [S0163-1829(98)06140-2].

【 授权许可】

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