Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies

Article

关键词: NEGATIVE DIFFERENTIAL RESISTANCE;    SINGLE-BARRIER HETEROSTRUCTURES;    CURRENT-VOLTAGE CHARACTERISTICS;    INTERBAND;    DEPENDENCE;    RATIOS;   

DOI  :  10.1103/PhysRevB.65.235326

来源: SCIE

【 摘 要 】

We have measured the current-voltage (I-V) of type-II InAs/GaSb/InAs double heterojunctions (DHET's) with GaAs like interface bonding and GaSb thickness between 0 and 1200 Angstrom. A negative differential resistance (NDR) is observed for all DHET's with GaSb thickness >60 Angstrom below which a dramatic change in the shape of the I-V and a marked hysteresis is observed in some samples. The temperature dependence of the I-V is found to be very strong below this critical GaSb thickness. The I-V characteristics of selected DHET's are also presented under hydrostatic pressures up to 11 kbar. Finally, a midinfrared electroluminescence is observed at 1 bar with a threshold at the NDR valley bias. The band profile calculations presented in the analysis are markedly different to those given in the literature and arise due to the positive charge that it is argued will build up in the GaSb layer under bias. We conclude that the dominant conduction mechanism in DHET's is most likely to arise out of an inelastic electron-heavy-hole interaction similar to that observed in single heterojunctions with GaAs like interface bonding, and not out of resonant electron-light-hole tunneling as proposed by Yu A Zener tunneling mechanism is shown to contribute to the background current beyond NDR.

【 授权许可】

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