Van Hove features in Bi2Sr2CaCu2O8+delta and effective parameters for Ni impurities inferred from STM spectra | |
Article | |
关键词: LOCAL ELECTRONIC-STRUCTURE; ANGLE-RESOLVED PHOTOEMISSION; D-WAVE SUPERCONDUCTOR; T-C SUPERCONDUCTOR; VANHOVE SINGULARITY; STATES; SPECTROSCOPY; DEFECTS; PROBE; ATOMS; | |
DOI : 10.1103/PhysRevB.66.060504 | |
来源: SCIE |
【 摘 要 】
We present a detailed quantitative comparison between theoretical calculations of the local density of states and recent experimental measurements of scanning tunneling spectra around Ni impurities in Bi2Sr2CaCu2O8+delta. A double-peak structure on the hole side of the spectrum at the Ni site is identified as the spin-split Van Hove singularity in the band structure. The Ni atom induces local changes in hopping matrix elements comparable in size to the induced on-site spin-dependent potential. We find evidence from the measurements of order-parameter suppression in the vicinity of the Ni impurity. These extracted impurity parameters can be of use in quantitative calculations of macroscopic response properties, such as the ac conductivity.
【 授权许可】
Free