Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Article

关键词: RAMAN-SPECTROSCOPY;    FILMS;    PHOTOLUMINESCENCE;    OVERGROWTH;    GROWTH;    LAYERS;   

DOI  :  10.1103/PhysRevB.67.045321

来源: SCIE

【 摘 要 】

Mapping of the strain distribution in uncoalesced pendeoepitaxial GaN on SiC by spatially resolved micro-Raman and microphotoluminescence, and lattice constants measured by high-resolution x-ray diffraction provide a consistent picture of relaxation of inhomogeneous and anisotropic strain. The pendeoepitaxial wings show a nearly complete strain relaxation and high optical quality with extremely narrow donor bound exciton peaks. The narrow exciton linewidths result in the determination of c-axis strain to an accuracy of 6x10(-6).

【 授权许可】

Free