Effects of Ga doping in La2/3Sr1/3MnO3

Article

关键词: MIXED-VALENCE MANGANITES;    COLOSSAL MAGNETORESISTANCE;    MANGANESE PEROVSKITES;    ELECTRICAL-PROPERTIES;    TRANSPORT-PROPERTIES;    MAGNETIC-PROPERTIES;    RESISTIVITY;    FIELD;    FE;    TRANSITION;   

DOI  :  10.1103/PhysRevB.68.054421

来源: SCIE

【 摘 要 】

We substitute Ga for Mn in the La2/3Sr1/3MnO3 compound to see how magnetic and atomic disorder affects the properties of this system. Ga doping gives rise to minor structural effects in the La2/3Sr1/3Mn1-xGaxO3 (0less than or equal toxless than or equal to0.5) series. However, the Curie temperature and the temperature at which the resistivity changes its behavior from insulating- to metallic-like both decrease drastically with increasing Ga content. In addition, these transitions do not occur at the same temperature for x>0.02. Ferromagnetic long-range order is observed for samples with x<0.3. For x>0.3, the system is in a spin-glass-like state. We obtain rather high values of negative magnetoresistance in xless than or equal to0.2 samples, which likely arises from spin-polarized tunneling.

【 授权许可】

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