Electron wave-function spillover in self-assembled InAs/InP quantum wires

Article

关键词: OPTICAL-PROPERTIES;    DIAMAGNETIC SHIFT;    EPITAXIAL-GROWTH;    DOTS;    NANOSTRUCTURES;    EXCITONS;    MAGNETOPHOTOLUMINESCENCE;    CONFINEMENT;    ISLANDS;    WELLS;   

DOI  :  10.1103/PhysRevB.70.155311

来源: SCIE

【 摘 要 】

Charge confinement in InAs/InP self-assembled quantum wires is studied experimentally using photoluminescence in pulsed magnetic fields and theoretically using adiabatic theory within the effective-mass approximation, taking into account the strain in the samples. We show both experimentally and theoretically that, in spite of the large conduction band offset, the electron wave function is significantly spilled out of the wire in the wire height direction for thin wires. Furthermore, for a wire thickness of up to 8 monolayers, the electron spillover is inversely related to the wire height. These effects are due to the large zero point energy of the electron. As the wire becomes thicker, the decrease in confinement energy is reflected in a reduction of the electron wave-function extent.

【 授权许可】

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