Strong electron confinement by stacking-fault-induced fractional steps on Ag(111) surfaces

Article

关键词: SCANNING TUNNELING SPECTROSCOPY;    STATE ELECTRONS;    QUANTUM CORRALS;    METAL-SURFACES;    RESONATORS;    MICROSCOPE;    SCATTERING;   

DOI  :  10.1103/PhysRevB.82.113413

来源: SCIE

【 摘 要 】

The electron-reflection amplitude R at stacking-fault- (SF-) induced fractional steps is determined for Ag(111) surface states using a low-temperature scanning tunneling microscope. Unexpectedly, R remains as high as 0.6-0.7 as energy increases from 0 to 0.5 eV, which is in clear contrast to its rapidly decreasing behavior for monatomic steps [L. Burgi et al., Phys. Rev. Lett. 81, 5370 (1998)]. Tight-binding calculations based on ab initio derived band structures confirm the experimental finding. The result may be explained by a significant contribution of the subsurface SF plane to the reflection of surface states.

【 授权许可】

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