Mimicking nanoribbon behavior using a graphene layer on SiC

Article

关键词: FIELD-EFFECT TRANSISTORS;    EPITAXIAL GRAPHENE;    ELECTRON-GAS;    SYSTEMS;   

DOI  :  10.1103/PhysRevB.82.153402

来源: SCIE

【 摘 要 】

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of [000 (1) over bar] SiC mimics (i) the energy bands around the Fermi level and (ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a SiC surface loses the graphenelike properties, which are restored solely over the trenches, providing in this way a confined strip region.

【 授权许可】

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