Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P delta layers

Article

关键词: UNIVERSAL CONDUCTANCE FLUCTUATIONS;    1/F NOISE;    SILICON;    TRANSITION;    DEFECTS;    IMPACT;   

DOI  :  10.1103/PhysRevB.83.233304

来源: SCIE

【 摘 要 】

We report low-frequency 1/f-noise measurements of degenerately doped Si:P delta layers at 4.2 K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead, the interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude.

【 授权许可】

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